Defect energetics and impurity incorporation mechanisms at the arsenic-passivated Si(100) surface

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Title: Defect energetics and impurity incorporation mechanisms at the arsenic-passivated Si(100) surface
Date: 1999
Citation: Ramamoorthy, M., Briggs, E. L., & Bernholc, J. (1999). Defect energetics and impurity incorporation mechanisms at the arsenic-passivated Si(100) surface. Physical review. B, Condensed matter and materials physics, 60(11), 8178-8184.
URI: http://www.lib.ncsu.edu/resolver/1840.2/207


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