Defect energetics and impurity incorporation mechanisms at the arsenic-passivated Si(100) surface
| Title: | Defect energetics and impurity incorporation mechanisms at the arsenic-passivated Si(100) surface |
| Date: | 1999 |
| Citation: | Ramamoorthy, M., Briggs, E. L., & Bernholc, J. (1999). Defect energetics and impurity incorporation mechanisms at the arsenic-passivated Si(100) surface. Physical review. B, Condensed matter and materials physics, 60(11), 8178-8184. |
| URI: | http://www.lib.ncsu.edu/resolver/1840.2/207 |
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| Bernhol_1999_Physical_Review_B_8178.pdf | 667.7Kb |
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