Defect energetics and impurity incorporation mechanisms at the arsenic-passivated Si(100) surface
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1999
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Ramamoorthy, M., Briggs, E. L., & Bernholc, J. (1999). Defect energetics and impurity incorporation mechanisms at the arsenic-passivated Si(100) surface. Physical review. B, Condensed matter and materials physics, 60(11), 8178-8184.