Interface electronic structure of Ta2O5-Al2O3 alloys for Si- field-effect transistor gate dielectric applications

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Title: Interface electronic structure of Ta2O5-Al2O3 alloys for Si- field-effect transistor gate dielectric applications
Date: 2002
Citation: Ulrich, M. D., Johnson, R. S., Hong, J. G., Rowe, J. E., Lucovsky, G., Quinton, J. S., Madey, T. E. (2002). Interface electronic structure of Ta2O5-Al2O3 alloys for Si- field-effect transistor gate dielectric applications. Journal of vacuum science & technology. B, Microelectronics and nanometer structures, 20(4), 1732-1738.
URI: http://www.lib.ncsu.edu/resolver/1840.2/233


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