Interface electronic structure of Ta2O5-Al2O3 alloys for Si- field-effect transistor gate dielectric applications
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2002
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Ulrich, M. D., Johnson, R. S., Hong, J. G., Rowe, J. E., Lucovsky, G., Quinton, J. S., Madey, T. E. (2002). Interface electronic structure of Ta2O5-Al2O3 alloys for Si- field-effect transistor gate dielectric applications. Journal of vacuum science & technology. B, Microelectronics and nanometer structures, 20(4), 1732-1738.
