Band offsets for ultrathin SiO2 and Si3N4 films on Si(111) and Si(100) from photoemission spectroscopy
Title: | Band offsets for ultrathin SiO2 and Si3N4 films on Si(111) and Si(100) from photoemission spectroscopy |
Date: | 1999 |
Citation: | Keister, J. W., Rowe, J. E., Kolodziej, J. J., Niimi, H., Madey, T. E., & Lucovsky, G. (1999). Band offsets for ultrathin SiO2 and Si3N4 films on Si(111) and Si(100) from photoemission spectroscopy. Journal of vacuum science & technology. B, Microelectronics and nanometer structures, 17(4), 1831-1835. |
URI: | http://www.lib.ncsu.edu/resolver/1840.2/240 |
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