Band offsets for ultrathin SiO2 and Si3N4 films on Si(111) and Si(100) from photoemission spectroscopy

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dc.date.accessioned 2008-02-22T22:46:22Z
dc.date.available 2008-02-22T22:46:22Z
dc.date.issued 1999
dc.identifier.citation Keister, J. W., Rowe, J. E., Kolodziej, J. J., Niimi, H., Madey, T. E., & Lucovsky, G. (1999). Band offsets for ultrathin SiO2 and Si3N4 films on Si(111) and Si(100) from photoemission spectroscopy. Journal of vacuum science & technology. B, Microelectronics and nanometer structures, 17(4), 1831-1835.
dc.identifier.uri http://www.lib.ncsu.edu/resolver/1840.2/240
dc.format.extent 77484 bytes
dc.format.mimetype application/pdf
dc.language.iso en
dc.title Band offsets for ultrathin SiO2 and Si3N4 films on Si(111) and Si(100) from photoemission spectroscopy
dc.type Article


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