Bonding constraint-induced defect formation at Si-dielectric interfaces and internal interfaces in dual-layer gate dielectrics

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Title: Bonding constraint-induced defect formation at Si-dielectric interfaces and internal interfaces in dual-layer gate dielectrics
Date: 1999
Citation: Lucovsky, G., Wu, Y., Niimi, H., Misra, V., & Phillips, J. C. (1999). Bonding constraint-induced defect formation at Si-dielectric interfaces and internal interfaces in dual-layer gate dielectrics. Journal of vacuum science & technology. B, Microelectronics and nanometer structures, 17(4), 1806-1812.
URI: http://www.lib.ncsu.edu/resolver/1840.2/241


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