Interfacial properties of ultrathin pure silicon nitride formed by remote plasma enhanced chemical vapor deposition
Title: | Interfacial properties of ultrathin pure silicon nitride formed by remote plasma enhanced chemical vapor deposition |
Date: | 1999 |
Citation: | Misra, V., Lazar, H., Wang, Z., Wu, Y., Niimi, H., Lucovsky, G., Wortman, J. J., & Hauser, J. R. (1999). Interfacial properties of ultrathin pure silicon nitride formed by remote plasma enhanced chemical vapor deposition. Journal of vacuum science & technology. B, Microelectronics and nanometer structures, 17(4), 1836-1839. |
URI: | http://www.lib.ncsu.edu/resolver/1840.2/245 |
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