Interfacial properties of ultrathin pure silicon nitride formed by remote plasma enhanced chemical vapor deposition

Show full item record

Title: Interfacial properties of ultrathin pure silicon nitride formed by remote plasma enhanced chemical vapor deposition
Date: 1999
Citation: Misra, V., Lazar, H., Wang, Z., Wu, Y., Niimi, H., Lucovsky, G., Wortman, J. J., & Hauser, J. R. (1999). Interfacial properties of ultrathin pure silicon nitride formed by remote plasma enhanced chemical vapor deposition. Journal of vacuum science & technology. B, Microelectronics and nanometer structures, 17(4), 1836-1839.
URI: http://www.lib.ncsu.edu/resolver/1840.2/245


Files in this item

Files Size Format View
Lucovsky_1999_Journal_Vac_Sci_Tech_B_1836.pdf 79.38Kb PDF View/Open

This item appears in the following Collection(s)

Show full item record