Interfacial properties of ultrathin pure silicon nitride formed by remote plasma enhanced chemical vapor deposition
No Thumbnail Available
Date
1999
Authors
Advisors
Journal Title
Series/Report No.
Journal ISSN
Volume Title
Publisher
Abstract
Description
Keywords
Citation
Misra, V., Lazar, H., Wang, Z., Wu, Y., Niimi, H., Lucovsky, G., Wortman, J. J., & Hauser, J. R. (1999). Interfacial properties of ultrathin pure silicon nitride formed by remote plasma enhanced chemical vapor deposition. Journal of vacuum science & technology. B, Microelectronics and nanometer structures, 17(4), 1836-1839.