Interfacial properties of ultrathin pure silicon nitride formed by remote plasma enhanced chemical vapor deposition

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dc.date.accessioned 2008-02-22T23:05:41Z
dc.date.available 2008-02-22T23:05:41Z
dc.date.issued 1999
dc.identifier.citation Misra, V., Lazar, H., Wang, Z., Wu, Y., Niimi, H., Lucovsky, G., Wortman, J. J., & Hauser, J. R. (1999). Interfacial properties of ultrathin pure silicon nitride formed by remote plasma enhanced chemical vapor deposition. Journal of vacuum science & technology. B, Microelectronics and nanometer structures, 17(4), 1836-1839.
dc.identifier.uri http://www.lib.ncsu.edu/resolver/1840.2/245
dc.format.extent 81295 bytes
dc.format.mimetype application/pdf
dc.language.iso en
dc.title Interfacial properties of ultrathin pure silicon nitride formed by remote plasma enhanced chemical vapor deposition
dc.type Article


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