Electron trapping in metal-insulator-semiconductor structures on n-GaN with SiO2 and Si3N4 dielectrics
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2004
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Bae, C., Krug, C., & Lucovsky, G. (2004). Electron trapping in metal-insulator-semiconductor structures on n-GaN with SiO2 and Si3N4 dielectrics. Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 22(6), 2379-2383.
