Electron trapping in metal-insulator-semiconductor structures on n-GaN with SiO2 and Si3N4 dielectrics

Show full item record

Title: Electron trapping in metal-insulator-semiconductor structures on n-GaN with SiO2 and Si3N4 dielectrics
Date: 2004
Citation: Bae, C., Krug, C., & Lucovsky, G. (2004). Electron trapping in metal-insulator-semiconductor structures on n-GaN with SiO2 and Si3N4 dielectrics. Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 22(6), 2379-2383.
URI: http://www.lib.ncsu.edu/resolver/1840.2/246


Files in this item

Files Size Format View
lucovsky_2004_j ... um_science_tech_A_2379.pdf 105.2Kb PDF View/Open

This item appears in the following Collection(s)

Show full item record