Low-temperature preparation of GaN-SiO2 interfaces with low defect density. I. Two-step remote plasma-assisted oxidation-deposition process
| Title: | Low-temperature preparation of GaN-SiO2 interfaces with low defect density. I. Two-step remote plasma-assisted oxidation-deposition process |
| Date: | 2004 |
| Citation: | Bae, C., & Lucovsky, G. (2004). Low-temperature preparation of GaN-SiO2 interfaces with low defect density. I. Two-step remote plasma-assisted oxidation-deposition process. Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 22(6), 2402-2410. |
| URI: | http://www.lib.ncsu.edu/resolver/1840.2/247 |
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