Monolayer-level controlled incorporation of nitrogen in ultrathin gate dielectrics using remote plasma processing: Formation of stacked 'N-O-N' gate dielectrics

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Title: Monolayer-level controlled incorporation of nitrogen in ultrathin gate dielectrics using remote plasma processing: Formation of stacked 'N-O-N' gate dielectrics
Date: 1999
Citation: Niimi, H., & Lucovsky, G. (1999). Monolayer-level controlled incorporation of nitrogen in ultrathin gate dielectrics using remote plasma processing: Formation of stacked 'N-O-N' gate dielectrics. Journal of vacuum science & technology. B, Microelectronics and nanometer structures, 17(6), 2610-2621.
URI: http://www.lib.ncsu.edu/resolver/1840.2/249


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