Investigation of postoxidation thermal treatments of Si/SiO2 interface in relationship to the kinetics of amorphous Si suboxide decomposition

Show full item record

Title: Investigation of postoxidation thermal treatments of Si/SiO2 interface in relationship to the kinetics of amorphous Si suboxide decomposition
Date: 1998
Citation: Hinds, B. J., Wang, F., Wolfe, D. M., Hinkle, C. L., & Lucovsky, G. (1998). Investigation of postoxidation thermal treatments of Si/SiO2 interface in relationship to the kinetics of amorphous Si suboxide decomposition. Journal of vacuum science & technology. B, Microelectronics and nanometer structures, 16(4), 2171-2176.
URI: http://www.lib.ncsu.edu/resolver/1840.2/255


Files in this item

Files Size Format View
Lucovsky_1998_Journal_Vac_Sci_Tech_B_2171.pdf 359.7Kb PDF View/Open

This item appears in the following Collection(s)

Show full item record