Investigation of postoxidation thermal treatments of Si/SiO2 interface in relationship to the kinetics of amorphous Si suboxide decomposition
Title: | Investigation of postoxidation thermal treatments of Si/SiO2 interface in relationship to the kinetics of amorphous Si suboxide decomposition |
Date: | 1998 |
Citation: | Hinds, B. J., Wang, F., Wolfe, D. M., Hinkle, C. L., & Lucovsky, G. (1998). Investigation of postoxidation thermal treatments of Si/SiO2 interface in relationship to the kinetics of amorphous Si suboxide decomposition. Journal of vacuum science & technology. B, Microelectronics and nanometer structures, 16(4), 2171-2176. |
URI: | http://www.lib.ncsu.edu/resolver/1840.2/255 |
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