Minimization of suboxide transition regions at Si-SiO2 interfaces by 900 degrees C rapid thermal annealing
| dc.date.accessioned | 2008-02-22T23:24:32Z | |
| dc.date.available | 2008-02-22T23:24:32Z | |
| dc.date.issued | 1997 | |
| dc.identifier.citation | Lucovsky, G., Banerjee, A., Hinds, B., Claflin, B., Koh, K., & Yang, H. (1997). Minimization of suboxide transition regions at Si-SiO2 interfaces by 900 degrees C rapid thermal annealing. Journal of vacuum science & technology. B, Microelectronics and nanometer structures, 15(4), 1074-1079. | |
| dc.identifier.uri | http://www.lib.ncsu.edu/resolver/1840.2/258 | |
| dc.format.extent | 106236 bytes | |
| dc.format.mimetype | application/pdf | |
| dc.language.iso | en | |
| dc.title | Minimization of suboxide transition regions at Si-SiO2 interfaces by 900 degrees C rapid thermal annealing | |
| dc.type | Article |
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