Minimization of suboxide transition regions at Si-SiO2 interfaces by 900 degrees C rapid thermal annealing

Show simple item record

dc.date.accessioned 2008-02-22T23:24:32Z
dc.date.available 2008-02-22T23:24:32Z
dc.date.issued 1997
dc.identifier.citation Lucovsky, G., Banerjee, A., Hinds, B., Claflin, B., Koh, K., & Yang, H. (1997). Minimization of suboxide transition regions at Si-SiO2 interfaces by 900 degrees C rapid thermal annealing. Journal of vacuum science & technology. B, Microelectronics and nanometer structures, 15(4), 1074-1079.
dc.identifier.uri http://www.lib.ncsu.edu/resolver/1840.2/258
dc.format.extent 106236 bytes
dc.format.mimetype application/pdf
dc.language.iso en
dc.title Minimization of suboxide transition regions at Si-SiO2 interfaces by 900 degrees C rapid thermal annealing
dc.type Article


Files in this item

Files Size Format View
Lucovsky_1997_Journal_Vac_Sci_Tech_B_1074.pdf 103.7Kb PDF View/Open

This item appears in the following Collection(s)

Show simple item record