Plasma-assisted formation of low defect density SiC-SiO2 interfaces

Show full item record

Title: Plasma-assisted formation of low defect density SiC-SiO2 interfaces
Date: 1997
Citation: Golz, A., Lucovsky, G., Koh, K., Wolfe, D., Niimi, H., & Kurz, H. (1997). Plasma-assisted formation of low defect density SiC-SiO2 interfaces. Journal of vacuum science & technology. B, Microelectronics and nanometer structures, 15(4), 1097-1104.
URI: http://www.lib.ncsu.edu/resolver/1840.2/259


Files in this item

Files Size Format View
Lucovsky_1997_Journal_Vac_Sci_Tech_B_1097.pdf 154.5Kb PDF View/Open

This item appears in the following Collection(s)

Show full item record