Low-temperature growth of silicon dioxide films - a study of chemical bonding by ellipsometry and infrared-spectroscopy

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Title: Low-temperature growth of silicon dioxide films - a study of chemical bonding by ellipsometry and infrared-spectroscopy
Date: 1987
Citation: Lucovsky, G., Manitini, M. J., Srivastava, J. K., & Irene, E. A. (1987). Low-temperature growth of silicon dioxide films - a study of chemical bonding by ellipsometry and infrared-spectroscopy. Journal of vacuum science & technology. B, Microelectronics processing and phenomena, 5(2), 530-537.
URI: http://www.lib.ncsu.edu/resolver/1840.2/262


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