New approach for the fabrication of device-quality Ge/GeO2/SiO2 interfaces using low temperature remote plasma processing

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Title: New approach for the fabrication of device-quality Ge/GeO2/SiO2 interfaces using low temperature remote plasma processing
Date: 2000
Citation: Johnson, R. S., Niimi, H., & Lucovsky, G. (2000). New approach for the fabrication of device-quality Ge/GeO2/SiO2 interfaces using low temperature remote plasma processing. Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 18(4), 1230-1233.
URI: http://www.lib.ncsu.edu/resolver/1840.2/263


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