Separate and independent reductions in direct tunneling in oxide/nitride stacks with monolayer interface nitridation associated with the (i) interface nitridation and (ii) increased physical thickness

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dc.date.accessioned 2008-02-22T23:37:55Z
dc.date.available 2008-02-22T23:37:55Z
dc.date.issued 2000
dc.identifier.citation Lucovsky, G., Wu, Y., Niimi, H., Yang, H., Keister, J., & Rowe, J. E. (2000). Separate and independent reductions in direct tunneling in oxide/nitride stacks with monolayer interface nitridation associated with the (i) interface nitridation and (ii) increased physical thickness. Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 18(4), 1163-1168.
dc.identifier.uri http://www.lib.ncsu.edu/resolver/1840.2/264
dc.format.extent 112259 bytes
dc.format.mimetype application/pdf
dc.language.iso en
dc.title Separate and independent reductions in direct tunneling in oxide/nitride stacks with monolayer interface nitridation associated with the (i) interface nitridation and (ii) increased physical thickness
dc.type Article


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