Monolayer-level controlled incorporation of nitrogen at Si-SiO2 interfaces using remote plasma processing

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Title: Monolayer-level controlled incorporation of nitrogen at Si-SiO2 interfaces using remote plasma processing
Date: 1999
Citation: Niimi, H., & Lucovsky, G. (1999). Monolayer-level controlled incorporation of nitrogen at Si-SiO2 interfaces using remote plasma processing. Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 17(6), 3185-3196.
URI: http://www.lib.ncsu.edu/resolver/1840.2/270


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