Monolayer-level controlled incorporation of nitrogen at Si-SiO2 interfaces using remote plasma processing
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1999
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Niimi, H., & Lucovsky, G. (1999). Monolayer-level controlled incorporation of nitrogen at Si-SiO2 interfaces using remote plasma processing. Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 17(6), 3185-3196.
