Bonding constraints and defect formation at interfaces between crystalline silicon and advanced single layer and composite gate dielectrics

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Title: Bonding constraints and defect formation at interfaces between crystalline silicon and advanced single layer and composite gate dielectrics
Date: 1999
Citation: Lucovsky, G., Wu, Y., Niimi, H., Misra, V., & Phillips, J. C. (1999). Bonding constraints and defect formation at interfaces between crystalline silicon and advanced single layer and composite gate dielectrics. Applied physics letters, 74(14), 2005-2007.
URI: http://www.lib.ncsu.edu/resolver/1840.2/275


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