Thermochemical stability of silicon-oxygen-carbon alloy thin films: A model system for chemical and structural relaxation at SiC-SiO2 interfaces
| Title: | Thermochemical stability of silicon-oxygen-carbon alloy thin films: A model system for chemical and structural relaxation at SiC-SiO2 interfaces |
| Date: | 1999 |
| Citation: | Wolfe, D. M., Hinds, B. J., Wang, F., Lucovsky, G., Ward, B. L., Xu, M., Nemanich, R. J., Maher, D. M. (1999). Thermochemical stability of silicon-oxygen-carbon alloy thin films: A model system for chemical and structural relaxation at SiC-SiO2 interfaces. Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 17(4), 2170-2177. |
| URI: | http://www.lib.ncsu.edu/resolver/1840.2/277 |
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