Thermochemical stability of silicon-oxygen-carbon alloy thin films: A model system for chemical and structural relaxation at SiC-SiO2 interfaces

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1999

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Wolfe, D. M., Hinds, B. J., Wang, F., Lucovsky, G., Ward, B. L., Xu, M., Nemanich, R. J., Maher, D. M. (1999). Thermochemical stability of silicon-oxygen-carbon alloy thin films: A model system for chemical and structural relaxation at SiC-SiO2 interfaces. Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 17(4), 2170-2177.

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