Characteristics of metalorganic remote plasma chemical vapor deposited Al2O3 gate stacks on SiC metal-oxide-semiconductor devices
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2001
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Lazar, H. R., Misra, V., Johnson, R. S., & Lucovsky, G. (2001). Characteristics of metalorganic remote plasma chemical vapor deposited Al2O3 gate stacks on SiC metal-oxide-semiconductor devices. Applied physics letters, 79(7), 973-975.
