Total dose and bias temperature stress effects for HfSiON on Si MOS capacitors
No Thumbnail Available
Date
2007
Authors
Advisors
Journal Title
Series/Report No.
Journal ISSN
Volume Title
Publisher
Abstract
Description
Keywords
Citation
Chen, D. K., Mamouni, E. E., Zhou, X. J., Schrimpf, R. D., Fleetwood, D. M., Galloway, K. F., Lee, S., Seo, H., Lucovsky, G., Jun, B., & Cressler, J. D. (2007). Total dose and bias temperature stress effects for HfSiON on Si MOS capacitors. IEEE transactions on nuclear science, 54(6), 1931-1937.