Total dose and bias temperature stress effects for HfSiON on Si MOS capacitors

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Title: Total dose and bias temperature stress effects for HfSiON on Si MOS capacitors
Date: 2007
Citation: Chen, D. K., Mamouni, E. E., Zhou, X. J., Schrimpf, R. D., Fleetwood, D. M., Galloway, K. F., Lee, S., Seo, H., Lucovsky, G., Jun, B., & Cressler, J. D. (2007). Total dose and bias temperature stress effects for HfSiON on Si MOS capacitors. IEEE transactions on nuclear science, 54(6), 1931-1937.
URI: http://www.lib.ncsu.edu/resolver/1840.2/401


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