Total dose and bias temperature stress effects for HfSiON on Si MOS capacitors

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dc.date.accessioned 2008-03-03T20:25:40Z
dc.date.available 2008-03-03T20:25:40Z
dc.date.issued 2007
dc.identifier.citation Chen, D. K., Mamouni, E. E., Zhou, X. J., Schrimpf, R. D., Fleetwood, D. M., Galloway, K. F., Lee, S., Seo, H., Lucovsky, G., Jun, B., & Cressler, J. D. (2007). Total dose and bias temperature stress effects for HfSiON on Si MOS capacitors. IEEE transactions on nuclear science, 54(6), 1931-1937.
dc.identifier.uri http://www.lib.ncsu.edu/resolver/1840.2/401
dc.format.extent 381497 bytes
dc.format.mimetype application/pdf
dc.language.iso en
dc.title Total dose and bias temperature stress effects for HfSiON on Si MOS capacitors
dc.type Article


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