Electronic properties of the Zr-ZrO2-SiO2-Si(100) gate stack structure
No Thumbnail Available
Date
2006
Authors
Advisors
Journal Title
Series/Report No.
Journal ISSN
Volume Title
Publisher
Abstract
Description
Keywords
Citation
Fulton, C. C., Lucovsky, G., & Nemanich, R. J. (2006). Electronic properties of the Zr-ZrO2-SiO2-Si(100) gate stack structure. Journal of applied physics, 99(6).