Reliability degradation of ultra-thin oxynitride and Al2O3 gate dielectric films owing to heavy-ion irradiation
| Title: | Reliability degradation of ultra-thin oxynitride and Al2O3 gate dielectric films owing to heavy-ion irradiation |
| Date: | 2002 |
| Citation: | Choi, B. K., Fleetwood, D. M., Massengill, L. W., Schrimpf, R. D., Galloway, K. F., Shaneyfelt, M. R., Meisenheimer, T. L., Dodd, P. E., Schwank, J. R., Lee, Y. M., Johnson, R. S., & Lucovsky, G. (2002). Reliability degradation of ultra-thin oxynitride and Al2O3 gate dielectric films owing to heavy-ion irradiation. Electronics letters, 38(4), 157-158. |
| URI: | http://www.lib.ncsu.edu/resolver/1840.2/414 |
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