Heavy-ion-induced breakdown in ultra-thin gate oxides and high- k dielectrics
| Title: | Heavy-ion-induced breakdown in ultra-thin gate oxides and high- k dielectrics |
| Date: | 2001 |
| Citation: | Massengill, L. W., Choi, B. K., Fleetwood, D. M., Schrimpf, R. D., Galloway, K. F., Shaneyfelt, M. R., Meisenheimer, T. L., Dodd, P. E., Schwank, J. R., Lee, Y. M., Johnson, R. S., & Lucovsky, G. (2001). Heavy-ion-induced breakdown in ultra-thin gate oxides and high- k dielectrics. IEEE transactions on nuclear science, 48(6), 1904-1912. |
| URI: | http://www.lib.ncsu.edu/resolver/1840.2/416 |
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