1.6 nm oxide equivalent gate dielectrics using nitride/oxide (N/O) composites prepared by RPECVD/oxidation process

Show full item record

Title: 1.6 nm oxide equivalent gate dielectrics using nitride/oxide (N/O) composites prepared by RPECVD/oxidation process
Date: 2000
Citation: Wu, Y. D., Lee, Y. M., & Lucovsky, G. (2000). 1.6 nm oxide equivalent gate dielectrics using nitride/oxide (N/O) composites prepared by RPECVD/oxidation process. IEEE electron device letters, 21(3), 116-118.
URI: http://www.lib.ncsu.edu/resolver/1840.2/418


Files in this item

Files Size Format View
lucovsky_2000_ieee_electron_device_lett_116.pdf 66.06Kb PDF View/Open

This item appears in the following Collection(s)

Show full item record