1.6 nm oxide equivalent gate dielectrics using nitride/oxide (N/O) composites prepared by RPECVD/oxidation process
| Title: | 1.6 nm oxide equivalent gate dielectrics using nitride/oxide (N/O) composites prepared by RPECVD/oxidation process |
| Date: | 2000 |
| Citation: | Wu, Y. D., Lee, Y. M., & Lucovsky, G. (2000). 1.6 nm oxide equivalent gate dielectrics using nitride/oxide (N/O) composites prepared by RPECVD/oxidation process. IEEE electron device letters, 21(3), 116-118. |
| URI: | http://www.lib.ncsu.edu/resolver/1840.2/418 |
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| Files | Size | Format | View |
|---|---|---|---|
| lucovsky_2000_ieee_electron_device_lett_116.pdf | 66.06Kb |
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