H loss mechanism during anneal of silicon nitride: Chemical dissociation

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Title:	H loss mechanism during anneal of silicon nitride: Chemical dissociation
Date:	2000
Citation:	Boehme, C., & Lucovsky, G. (2000). H loss mechanism during anneal of silicon nitride: Chemical dissociation. Journal of applied physics, 88(10), 6055-6059.
URI:	http://www.lib.ncsu.edu/resolver/1840.2/419



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