H loss mechanism during anneal of silicon nitride: Chemical dissociation

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Title: H loss mechanism during anneal of silicon nitride: Chemical dissociation
Date: 2000
Citation: Boehme, C., & Lucovsky, G. (2000). H loss mechanism during anneal of silicon nitride: Chemical dissociation. Journal of applied physics, 88(10), 6055-6059.
URI: http://www.lib.ncsu.edu/resolver/1840.2/419


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