H loss mechanism during anneal of silicon nitride: Chemical dissociation
Title: | H loss mechanism during anneal of silicon nitride: Chemical dissociation |
Date: | 2000 |
Citation: | Boehme, C., & Lucovsky, G. (2000). H loss mechanism during anneal of silicon nitride: Chemical dissociation. Journal of applied physics, 88(10), 6055-6059. |
URI: | http://www.lib.ncsu.edu/resolver/1840.2/419 |
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