H loss mechanism during anneal of silicon nitride: Chemical dissociation

No Thumbnail Available

Date

2000

Authors

Advisors

Journal Title

Series/Report No.

Journal ISSN

Volume Title

Publisher

Abstract

Description

Keywords

Citation

Boehme, C., & Lucovsky, G. (2000). H loss mechanism during anneal of silicon nitride: Chemical dissociation. Journal of applied physics, 88(10), 6055-6059.

Degree

Discipline

Collections