The effects of interfacial sub-oxide transition regions and monolayer level nitridation on tunneling currents in silicon devices
| Title: | The effects of interfacial sub-oxide transition regions and monolayer level nitridation on tunneling currents in silicon devices |
| Date: | 2000 |
| Citation: | Yang, H., Niimi, H., Keister, J. W., & Lucovsky, G. (2000). The effects of interfacial sub-oxide transition regions and monolayer level nitridation on tunneling currents in silicon devices. IEEE electron device letters, 21(2), 76-78. |
| URI: | http://www.lib.ncsu.edu/resolver/1840.2/421 |
Files in this item
| Files | Size | Format | View |
|---|---|---|---|
| lucovsky_2000_ieee_electron_device_lett_76.pdf | 62.45Kb |
View/ |