The effects of interfacial sub-oxide transition regions and monolayer level nitridation on tunneling currents in silicon devices

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Title: The effects of interfacial sub-oxide transition regions and monolayer level nitridation on tunneling currents in silicon devices
Date: 2000
Citation: Yang, H., Niimi, H., Keister, J. W., & Lucovsky, G. (2000). The effects of interfacial sub-oxide transition regions and monolayer level nitridation on tunneling currents in silicon devices. IEEE electron device letters, 21(2), 76-78.
URI: http://www.lib.ncsu.edu/resolver/1840.2/421


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