Tunneling currents through ultrathin oxide/nitride dual layer gate dielectrics for advanced microelectronic devices

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Title: Tunneling currents through ultrathin oxide/nitride dual layer gate dielectrics for advanced microelectronic devices
Date: 1998
Citation: Yang, H. Y., Niimi, H., & Lucovsky, G. (1998). Tunneling currents through ultrathin oxide/nitride dual layer gate dielectrics for advanced microelectronic devices. Journal of applied physics, 83(4), 2327-2337.
URI: http://www.lib.ncsu.edu/resolver/1840.2/457


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