The performance and reliability of PMOSFET's with ultrathin silicon nitride/oxide stacked gate dielectrics with nitrided Si-SiO2 interfaces prepared by remote plasma enhanced CVD and post-deposition rapid thermal annealing

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Title: The performance and reliability of PMOSFET's with ultrathin silicon nitride/oxide stacked gate dielectrics with nitrided Si-SiO2 interfaces prepared by remote plasma enhanced CVD and post-deposition rapid thermal annealing
Date: 2000
Citation: Wu, Y., Lucovsky, G., Lee, Y. M. (2000). The performance and reliability of PMOSFET's with ultrathin silicon nitride/oxide stacked gate dielectrics with nitrided Si-SiO2 interfaces prepared by remote plasma enhanced CVD and post-deposition rapid thermal annealing. IEEE transactions on electron devices, 47(7), 1361-1369.
URI: http://www.lib.ncsu.edu/resolver/1840.2/460


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