The performance and reliability of PMOSFET's with ultrathin silicon nitride/oxide stacked gate dielectrics with nitrided Si-SiO2 interfaces prepared by remote plasma enhanced CVD and post-deposition rapid thermal annealing
| Title: | The performance and reliability of PMOSFET's with ultrathin silicon nitride/oxide stacked gate dielectrics with nitrided Si-SiO2 interfaces prepared by remote plasma enhanced CVD and post-deposition rapid thermal annealing |
| Date: | 2000 |
| Citation: | Wu, Y., Lucovsky, G., Lee, Y. M. (2000). The performance and reliability of PMOSFET's with ultrathin silicon nitride/oxide stacked gate dielectrics with nitrided Si-SiO2 interfaces prepared by remote plasma enhanced CVD and post-deposition rapid thermal annealing. IEEE transactions on electron devices, 47(7), 1361-1369. |
| URI: | http://www.lib.ncsu.edu/resolver/1840.2/460 |
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| lucovsky_2000_ieee_trans_electron_devices_1361.pdf | 177.3Kb |
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