Photoluminescence and electrical characteristics of the two-dimensional electron gas in Si delta-doped GaN layers

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dc.date.accessioned 2008-04-16T17:51:37Z
dc.date.available 2008-04-16T17:51:37Z
dc.date.issued 2001
dc.identifier.citation Teng, C. W., Aboelfotoh, M. O., Davis, R. F., Muth, J. F., Kolbas, R. M. (2001). Photoluminescence and electrical characteristics of the two-dimensional electron gas in Si delta-doped GaN layers. Applied physics letters, 78(12), 1688-1690.
dc.identifier.uri http://www.lib.ncsu.edu/resolver/1840.2/581
dc.format.extent 50565 bytes
dc.format.mimetype application/pdf
dc.language.iso en
dc.title Photoluminescence and electrical characteristics of the two-dimensional electron gas in Si delta-doped GaN layers
dc.type Article


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