Fine structure of near-band-edge photoluminescence in He+- irradiated GaN grown on SiC

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Title: Fine structure of near-band-edge photoluminescence in He+- irradiated GaN grown on SiC
Date: 1998
Citation: Joshkin, V. A., Parker, C. A., Bedair, S. M., Krasnobaev, L. Y., Cuomo, J. J., Davis, R. F., & Suvkhanov, A. (1998). Fine structure of near-band-edge photoluminescence in He+- irradiated GaN grown on SiC. Applied physics letters, 72(22), 2838-2840.
URI: http://www.lib.ncsu.edu/resolver/1840.2/588


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