Fine structure of near-band-edge photoluminescence in He+- irradiated GaN grown on SiC
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1998
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Joshkin, V. A., Parker, C. A., Bedair, S. M., Krasnobaev, L. Y., Cuomo, J. J., Davis, R. F., & Suvkhanov, A. (1998). Fine structure of near-band-edge photoluminescence in He+- irradiated GaN grown on SiC. Applied physics letters, 72(22), 2838-2840.
