Deposition and doping of silicon carbide by gas-source molecular beam epitaxy

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Title: Deposition and doping of silicon carbide by gas-source molecular beam epitaxy
Date: 1997
Citation: Kern, R. S., & Davis, R. F. (1997). Deposition and doping of silicon carbide by gas-source molecular beam epitaxy. Applied physics letters, 71(10), 1356-1358.
URI: http://www.lib.ncsu.edu/resolver/1840.2/595


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