Deposition and doping of silicon carbide by gas-source molecular beam epitaxy
No Thumbnail Available
Date
1997
Authors
Advisors
Journal Title
Series/Report No.
Journal ISSN
Volume Title
Publisher
Abstract
Description
Keywords
Citation
Kern, R. S., & Davis, R. F. (1997). Deposition and doping of silicon carbide by gas-source molecular beam epitaxy. Applied physics letters, 71(10), 1356-1358.
