Deposition and doping of silicon carbide by gas-source molecular beam epitaxy
| Title: | Deposition and doping of silicon carbide by gas-source molecular beam epitaxy |
| Date: | 1997 |
| Citation: | Kern, R. S., & Davis, R. F. (1997). Deposition and doping of silicon carbide by gas-source molecular beam epitaxy. Applied physics letters, 71(10), 1356-1358. |
| URI: | http://www.lib.ncsu.edu/resolver/1840.2/595 |
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| davis_1997_applied_physics_letters_1356.pdf | 65.65Kb |
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