Dislocation density reduction via lateral epitaxy in selectively grown GaN structures

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Title: Dislocation density reduction via lateral epitaxy in selectively grown GaN structures
Date: 1997
Citation: Zheleva, T. S., Nam, O.-H., Bremser, M. D., & Davis, R. F. (1997). Dislocation density reduction via lateral epitaxy in selectively grown GaN structures. Applied physics letters, 71(17), 2472-2474.
URI: http://www.lib.ncsu.edu/resolver/1840.2/596


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