Selective etching of GaN over AlN using an inductively coupled plasma and an O-2/Cl-2/Ar chemistry
| Title: | Selective etching of GaN over AlN using an inductively coupled plasma and an O-2/Cl-2/Ar chemistry |
| Date: | 2000 |
| Citation: | Smith, S. A., Lampert, W. V., Rajagopal, P., Banks, A. D., Thomson, D., & Davis, R. F. (2000). Selective etching of GaN over AlN using an inductively coupled plasma and an O-2/Cl-2/Ar chemistry. Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 18(3), 879-881. |
| URI: | http://www.lib.ncsu.edu/resolver/1840.2/716 |
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