Selective etching of GaN over AlN using an inductively coupled plasma and an O-2/Cl-2/Ar chemistry

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Title: Selective etching of GaN over AlN using an inductively coupled plasma and an O-2/Cl-2/Ar chemistry
Date: 2000
Citation: Smith, S. A., Lampert, W. V., Rajagopal, P., Banks, A. D., Thomson, D., & Davis, R. F. (2000). Selective etching of GaN over AlN using an inductively coupled plasma and an O-2/Cl-2/Ar chemistry. Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 18(3), 879-881.
URI: http://www.lib.ncsu.edu/resolver/1840.2/716


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