Stacked quantum well aluminum indium gallium nitride light emitting diodes
No Thumbnail Available
Date
1997
Authors
Advisors
Journal Title
Series/Report No.
Journal ISSN
Volume Title
Publisher
Abstract
Description
Keywords
Citation
McIntosh, F. G., Bedair, S. M., El-Masry, N. A., & Roberts, J. C. (1997). Stacked quantum well aluminum indium gallium nitride light emitting diodes. U.S. Patent No. 5,684,309. Washington, DC: U.S. Patent and Trademark Office.