Stacked quantum well aluminum indium gallium nitride light emitting diodes

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Title: Stacked quantum well aluminum indium gallium nitride light emitting diodes
Date: 1997
Citation: McIntosh, F. G., Bedair, S. M., El-Masry, N. A., & Roberts, J. C. (1997). Stacked quantum well aluminum indium gallium nitride light emitting diodes. U.S. Patent No. 5,684,309. Washington, DC: U.S. Patent and Trademark Office.
URI: http://www.lib.ncsu.edu/resolver/1840.2/735


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