Integrated heterostructure of group II-VI semiconductor materials including epitaxial ohmic contact and method of fabricating same

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Title: Integrated heterostructure of group II-VI semiconductor materials including epitaxial ohmic contact and method of fabricating same
Date: 1998
Citation: Schetzina, J. F. (1998). Integrated heterostructure of group II-VI semiconductor materials including epitaxial ohmic contact and method of fabricating same. U.S. Patent No. 5,818,072. Washington, DC: U.S. Patent and Trademark Office.
URI: http://www.lib.ncsu.edu/resolver/1840.2/776


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