Integrated heterostructure of group II-VI semiconductor materials including epitaxial ohmic contact and method of fabricating same

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dc.date.accessioned 2008-07-21T16:09:58Z
dc.date.available 2008-07-21T16:09:58Z
dc.date.issued 1998
dc.identifier.citation Schetzina, J. F. (1998). Integrated heterostructure of group II-VI semiconductor materials including epitaxial ohmic contact and method of fabricating same. U.S. Patent No. 5,818,072. Washington, DC: U.S. Patent and Trademark Office.
dc.identifier.uri http://www.lib.ncsu.edu/resolver/1840.2/776
dc.format.extent 83182 bytes
dc.format.mimetype application/pdf
dc.language.iso en
dc.title Integrated heterostructure of group II-VI semiconductor materials including epitaxial ohmic contact and method of fabricating same
dc.type Patent


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