Silicon carbide switching devices having near ideal breakdown voltage capability and ultralow on-state resistance

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Title: Silicon carbide switching devices having near ideal breakdown voltage capability and ultralow on-state resistance
Date: 1998
Citation: Sridevan, Srikant, McLarty, Peter Kerr, Baliga, Bantval Jayant. (1998). Silicon carbide switching devices having near ideal breakdown voltage capability and ultralow on-state resistance. U.S. Patent No. 5,742,076. Washington, DC: U.S. Patent and Trademark Office.
URI: http://www.lib.ncsu.edu/resolver/1840.2/779


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