Methods of forming indium gallium nitride or aluminum indium gallium nitride using controlled hydrogen gas flow

No Thumbnail Available

Date

1998

Authors

Advisors

Journal Title

Series/Report No.

Journal ISSN

Volume Title

Publisher

Abstract

Description

Keywords

Citation

McIntosh, F. G., Bedair, S. M., El-Masry, N. A., & Roberts, J. C. (1998). Methods of forming indium gallium nitride or aluminum indium gallium nitride using controlled hydrogen gas flow. U.S. Patent No. 5,851,905. Washington, DC: U.S. Patent and Trademark Office.

Degree

Discipline

Collections