Methods of forming indium gallium nitride or aluminum indium gallium nitride using controlled hydrogen gas flow

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Title: Methods of forming indium gallium nitride or aluminum indium gallium nitride using controlled hydrogen gas flow
Date: 1998
Citation: McIntosh, F. G., Bedair, S. M., El-Masry, N. A., & Roberts, J. C. (1998). Methods of forming indium gallium nitride or aluminum indium gallium nitride using controlled hydrogen gas flow. U.S. Patent No. 5,851,905. Washington, DC: U.S. Patent and Trademark Office.
URI: http://www.lib.ncsu.edu/resolver/1840.2/788


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