Vertical field effect transistors having improved breakdown voltage capability and low on-state resistance

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Title: Vertical field effect transistors having improved breakdown voltage capability and low on-state resistance
Date: 1997
Citation: Baliga, B. J. (1997). Vertical field effect transistors having improved breakdown voltage capability and low on-state resistance. U.S. Patent No. 5,637,898. Washington, DC: U.S. Patent and Trademark Office.
URI: http://www.lib.ncsu.edu/resolver/1840.2/804


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