Methods of fabricating voltage breakdown resistant monocrystalline silicon carbide semiconductor devices

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Title: Methods of fabricating voltage breakdown resistant monocrystalline silicon carbide semiconductor devices
Date: 1997
Citation: Baliga, B. J., & Alok, D. (1997). Methods of fabricating voltage breakdown resistant monocrystalline silicon carbide semiconductor devices. U.S. Patent No. 5,635,412. Washington, DC: U.S. Patent and Trademark Office.
URI: http://www.lib.ncsu.edu/resolver/1840.2/805


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