Bidirectional silicon carbide power devices having voltage supporting regions therein for providing improved blocking voltage capability

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Title: Bidirectional silicon carbide power devices having voltage supporting regions therein for providing improved blocking voltage capability
Date: 2000
Citation: Baliga, B. J. (2000). Bidirectional silicon carbide power devices having voltage supporting regions therein for providing improved blocking voltage capability. U.S. Patent No. 6,023,078. Washington, DC: U.S. Patent and Trademark Office.
URI: http://www.lib.ncsu.edu/resolver/1840.2/813


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