Methods of forming silicon carbide semiconductor devices having buried silicon carbide conduction barrier layers therein

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Title: Methods of forming silicon carbide semiconductor devices having buried silicon carbide conduction barrier layers therein
Date: 1999
Citation: Baliga, B. J. (1999). Methods of forming silicon carbide semiconductor devices having buried silicon carbide conduction barrier layers therein. U.S. Patent No. 5,950,076. Washington, DC: U.S. Patent and Trademark Office.
URI: http://www.lib.ncsu.edu/resolver/1840.2/815


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