Methods of forming silicon carbide semiconductor devices having buried silicon carbide conduction barrier layers therein

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dc.date.accessioned 2008-07-21T19:10:20Z
dc.date.available 2008-07-21T19:10:20Z
dc.date.issued 1999
dc.identifier.citation Baliga, B. J. (1999). Methods of forming silicon carbide semiconductor devices having buried silicon carbide conduction barrier layers therein. U.S. Patent No. 5,950,076. Washington, DC: U.S. Patent and Trademark Office.
dc.identifier.uri http://www.lib.ncsu.edu/resolver/1840.2/815
dc.format.extent 86020 bytes
dc.format.mimetype application/pdf
dc.language.iso en
dc.title Methods of forming silicon carbide semiconductor devices having buried silicon carbide conduction barrier layers therein
dc.type Patent


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